US 11,728,448 B2
Fabrication of a semiconductor device including a quantum dot structure
Markus Scherrer, Zurich (CH); Kirsten Emilie Moselund, Ruschlikon (CH); Preksha Tiwari, Zurich (CH); and Noelia Vico Trivino, Zurich (CH)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed on Nov. 15, 2021, as Appl. No. 17/454,830.
Prior Publication US 2023/0155044 A1, May 18, 2023
Int. Cl. H01L 21/02 (2006.01); H01L 31/0352 (2006.01)
CPC H01L 31/035218 (2013.01) [H01L 21/02381 (2013.01); H01L 21/02505 (2013.01); H01L 21/02645 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method for fabricating a semiconductor device, the method comprising:
providing a cavity structure, the cavity structure comprising a seed area comprising a seed material;
growing, within the cavity structure, a first embedding layer in a first growth direction from a seed surface of the seed material;
removing the seed material;
growing, in a second growth direction, from a seed surface of the first embedding layer, a quantum dot structure; and
growing, within the cavity structure, on a surface of the quantum dot structure, a second embedding layer in the second growth direction, wherein the second growth direction is different from the first growth direction.