CPC H01L 31/035218 (2013.01) [H01L 21/02381 (2013.01); H01L 21/02505 (2013.01); H01L 21/02645 (2013.01)] | 19 Claims |
1. A method for fabricating a semiconductor device, the method comprising:
providing a cavity structure, the cavity structure comprising a seed area comprising a seed material;
growing, within the cavity structure, a first embedding layer in a first growth direction from a seed surface of the seed material;
removing the seed material;
growing, in a second growth direction, from a seed surface of the first embedding layer, a quantum dot structure; and
growing, within the cavity structure, on a surface of the quantum dot structure, a second embedding layer in the second growth direction, wherein the second growth direction is different from the first growth direction.
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