CPC H01L 29/6681 (2013.01) [H01L 29/0847 (2013.01); H01L 29/2003 (2013.01); H01L 29/66522 (2013.01); H01L 29/785 (2013.01)] | 12 Claims |
1. A method for forming an alignment contact, the method comprising:
providing a III-nitride substrate;
epitaxially growing a first III-nitride layer on the III-nitride substrate, wherein the first III-nitride layer is characterized by a first conductivity type;
forming a plurality of III-nitride fins on the first III-nitride layer, wherein each the plurality of III-nitride fins is separated by one of a plurality of first recess regions and characterized by a fin surface, wherein the plurality of III-nitride fins are characterized by the first conductivity type;
forming a III-nitride gate layer disposed between adjacent III-nitride fins of the plurality of III-nitride fins, wherein a surface of the III-nitride gate layer is substantially coplanar with the fin surface;
epitaxially regrowing a III-nitride source contact portion on each of the plurality of III-nitride fins; and
forming a source contact structure on the III-nitride source contact portions.
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