US 11,728,415 B2
Method for regrown source contacts for vertical gallium nitride based FETS
Clifford Drowley, Santa Clara, CA (US); Andrew P. Edwards, Santa Clara, CA (US); Subhash Srinivas Pidaparthi, Santa Clara, CA (US); and Shahin Sharifzadeh, Santa Clara, CA (US)
Assigned to Nexgen Power Systems, Inc., Santa Clara, CA (US)
Filed by NEXGEN POWER SYSTEMS, INC., Santa Clara, CA (US)
Filed on Mar. 24, 2021, as Appl. No. 17/211,562.
Claims priority of provisional application 63/000,968, filed on Mar. 27, 2020.
Prior Publication US 2021/0305404 A1, Sep. 30, 2021
Int. Cl. H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/20 (2006.01)
CPC H01L 29/6681 (2013.01) [H01L 29/0847 (2013.01); H01L 29/2003 (2013.01); H01L 29/66522 (2013.01); H01L 29/785 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A method for forming an alignment contact, the method comprising:
providing a III-nitride substrate;
epitaxially growing a first III-nitride layer on the III-nitride substrate, wherein the first III-nitride layer is characterized by a first conductivity type;
forming a plurality of III-nitride fins on the first III-nitride layer, wherein each the plurality of III-nitride fins is separated by one of a plurality of first recess regions and characterized by a fin surface, wherein the plurality of III-nitride fins are characterized by the first conductivity type;
forming a III-nitride gate layer disposed between adjacent III-nitride fins of the plurality of III-nitride fins, wherein a surface of the III-nitride gate layer is substantially coplanar with the fin surface;
epitaxially regrowing a III-nitride source contact portion on each of the plurality of III-nitride fins; and
forming a source contact structure on the III-nitride source contact portions.