US 11,728,403 B2
Semiconductor device
Yuzo Fukuzaki, Kanagawa (JP)
Assigned to SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Filed on Aug. 23, 2021, as Appl. No. 17/409,293.
Application 17/409,293 is a continuation of application No. 16/964,230, granted, now 11,133,396, previously published as PCT/JP2018/047706, filed on Dec. 26, 2018.
Claims priority of application No. 2018-013471 (JP), filed on Jan. 30, 2018.
Prior Publication US 2022/0045191 A1, Feb. 10, 2022
Int. Cl. H01L 29/51 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01)
CPC H01L 29/511 (2013.01) [H01L 29/0669 (2013.01); H01L 29/1033 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a stacked structure having a channel formation region layers and gate electrode layers alternately arranged on top of each other on a base,
wherein a lowermost layer of the stacked structure is formed with a 1st layer of the gate electrode layers,
wherein an uppermost layer of the stacked structure is formed with an Nth (where N≥3) layer of the gate electrode layers, and
wherein each channel formation region layer includes at least one channel structure portion and each channel structure portion includes extensions provided on each end of the at least one channel structure portion.