CPC H01L 29/42328 (2013.01) [H01L 23/552 (2013.01); H01L 27/14649 (2013.01); H01L 27/14658 (2013.01); H01L 27/14689 (2013.01); H01L 29/66825 (2013.01); H01L 29/788 (2013.01)] | 20 Claims |
1. A semiconductor device having a plurality of separated floating gates directly embedded within a conducting channel within the semiconductor device;
wherein each one of the plurality of separated floating gates is spaced-apart from another one of the plurality of separated floating gates within the conducting channel;
wherein each of the plurality of separated floating gates has a size smaller than a mean free path of electrons in the semiconductor device.
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