US 11,728,390 B2
Oxide semiconductor film, thin film transistor, oxide sintered body, and sputtering target
Kazuyoshi Inoue, Sodegaura (JP); and Masatoshi Shibata, Sodegaura (JP)
Assigned to IDEMITSU KOSAN CO., LTD., Tokyo (JP)
Appl. No. 16/482,203
Filed by IDEMITSU KOSAN CO., LTD., Tokyo (JP)
PCT Filed Jan. 23, 2018, PCT No. PCT/JP2018/001929
§ 371(c)(1), (2) Date Jul. 30, 2019,
PCT Pub. No. WO2018/143005, PCT Pub. Date Aug. 9, 2018.
Claims priority of application No. 2017-016853 (JP), filed on Feb. 1, 2017.
Prior Publication US 2019/0348505 A1, Nov. 14, 2019
Int. Cl. H01L 29/24 (2006.01); C04B 35/01 (2006.01); C04B 35/64 (2006.01); C23C 14/08 (2006.01); C23C 14/34 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 29/26 (2006.01)
CPC H01L 29/24 (2013.01) [C04B 35/01 (2013.01); C04B 35/64 (2013.01); C23C 14/086 (2013.01); C23C 14/3414 (2013.01); H01L 29/26 (2013.01); H01L 29/66969 (2013.01); H01L 29/66977 (2013.01); H01L 29/78693 (2013.01); C04B 2235/3217 (2013.01); C04B 2235/3286 (2013.01); C04B 2235/3293 (2013.01); C04B 2235/602 (2013.01); H01L 29/263 (2013.01)] 16 Claims
OG exemplary drawing
 
1. An oxide semiconductor film comprising In, Ga, Sn and Al at respective atomic ratios satisfying formulae (1) to (4) below,
0.01≤Ga/(In+Ga+Sn)≤0.30   (1),
0.01≤Sn/(In+Ga+Sn)≤0.40   (2),
0.55≤In/(In+Ga+Sn)≤0.98   (3), and
0.05≤Al/(In+Ga+Sn+Al)≤0.30   (4), wherein In, Ga, Sn and Al are the only metal elements in the film.