CPC H01L 29/24 (2013.01) [C04B 35/01 (2013.01); C04B 35/64 (2013.01); C23C 14/086 (2013.01); C23C 14/3414 (2013.01); H01L 29/26 (2013.01); H01L 29/66969 (2013.01); H01L 29/66977 (2013.01); H01L 29/78693 (2013.01); C04B 2235/3217 (2013.01); C04B 2235/3286 (2013.01); C04B 2235/3293 (2013.01); C04B 2235/602 (2013.01); H01L 29/263 (2013.01)] | 16 Claims |
1. An oxide semiconductor film comprising In, Ga, Sn and Al at respective atomic ratios satisfying formulae (1) to (4) below,
0.01≤Ga/(In+Ga+Sn)≤0.30 (1),
0.01≤Sn/(In+Ga+Sn)≤0.40 (2),
0.55≤In/(In+Ga+Sn)≤0.98 (3), and
0.05≤Al/(In+Ga+Sn+Al)≤0.30 (4), wherein In, Ga, Sn and Al are the only metal elements in the film.
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