US 11,728,378 B2
Semiconductor device and method for manufacturing same
Poren Tang, Beijing (CN)
Assigned to Semiconductor Manufacturing International (Beijing) Corporation, Beijing (CN); and Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai (CN)
Filed by Semiconductor Manufacturing International (Beijing) Corporation, Beijing (CN); and Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai (CN)
Filed on Mar. 24, 2021, as Appl. No. 17/210,819.
Application 17/210,819 is a division of application No. 16/181,786, filed on Nov. 6, 2018, granted, now 10,991,794.
Claims priority of application No. 201711306991.6 (CN), filed on Dec. 11, 2017.
Prior Publication US 2021/0210597 A1, Jul. 8, 2021
Int. Cl. H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 21/768 (2006.01); H01L 29/49 (2006.01); H01L 29/78 (2006.01); H01L 21/764 (2006.01)
CPC H01L 29/0649 (2013.01) [H01L 21/7682 (2013.01); H01L 29/41775 (2013.01); H01L 29/4991 (2013.01); H01L 29/6653 (2013.01); H01L 29/66575 (2013.01); H01L 21/764 (2013.01); H01L 29/78 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate, comprising a source and a drain;
a gate structure disposed on the substrate, wherein the source and the drain are respectively located on two sides of the gate structure;
a first inter-layer dielectric layer covering the gate structure;
a source contact hole running through the first inter-layer dielectric layer and exposing the source and a drain contact hole running through the first inter-layer dielectric layer and exposing the drain;
a source contact member connected to the source in the source contact hole and a drain contact member connected to the drain in the drain contact hole;
an air gap between the gate structure and the source contact member or between the gate structure and the drain contact member, wherein side walls of the air gap are a side wall of the gate structure and a side wall of the source contact member or a side wall of the gate structure and a side wall of the drain contact member; and
a second inter-layer dielectric layer on the first inter-layer dielectric layer, the source contact member, and the drain contact member, wherein the second inter-layer dielectric layer covers the air gap, a top end of the air gap is level with a top surface of the first inter-layer dielectric layer and a bottom surface of the second inter-layer dielectric layer.