US 11,728,372 B2
Semiconductor device
Han Jin Lim, Seoul (KR); Ki Nam Kim, Seoul (KR); Hyung Suk Jung, Suwon-si (KR); Kyoo Ho Jung, Seoul (KR); and Ki Hyun Hwang, Seongnam-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Apr. 6, 2022, as Appl. No. 17/714,259.
Application 17/714,259 is a continuation of application No. 16/590,565, filed on Oct. 2, 2019, granted, now 11,322,578.
Claims priority of application No. 10-2019-0025713 (KR), filed on Mar. 6, 2019.
Prior Publication US 2022/0231117 A1, Jul. 21, 2022
Int. Cl. H01L 49/02 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H10B 53/30 (2023.01); H10B 12/00 (2023.01)
CPC H01L 28/56 (2013.01) [H01L 21/02181 (2013.01); H01L 21/02189 (2013.01); H01L 21/02192 (2013.01); H01L 21/02197 (2013.01); H01L 21/28247 (2013.01); H10B 53/30 (2023.02); H10B 12/00 (2023.02)] 18 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
first and second electrodes apart from each other; and
a capacitor dielectric film between the first electrode and the second electrode and including a first dielectric film and a second dielectric film, the first dielectric film being between the second dielectric film and the first electrode,
wherein each of the first dielectric film and the second dielectric film includes a metal oxide film,
a metal contained in the metal oxide film is contained in a transition metal of group 4 (IV B) of a periodic table,
the first dielectric film has an orthorhombic crystal system,
the metal oxide film included in the second dielectric film is a paraelectric material, and
the second dielectric film has a monoclinic crystal system.