CPC H01L 27/1463 (2013.01) [H01L 27/1464 (2013.01); H01L 27/14643 (2013.01); H01L 27/14689 (2013.01); H01L 27/14609 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01)] | 20 Claims |
1. An integrated chip, comprising:
an image sensor disposed within a semiconductor substrate, wherein the semiconductor substrate comprises sidewalls that form one or more trenches extending from a first surface of the semiconductor substrate to within the semiconductor substrate;
one or more isolation structures arranged within the one or more trenches, wherein the semiconductor substrate covers an entire bottom surface of the one or more isolation structures;
a doped region arranged within the semiconductor substrate vertically between the first surface of the semiconductor substrate and a top of the image sensor facing the first surface of the semiconductor substrate; and
wherein the doped region has a higher concentration of a first dopant type than an abutting part of the semiconductor substrate that extends along opposing sides of the image sensor.
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