US 11,728,357 B2
Solid-state imaging device and electronic equipment
Isao Hirota, Kanagawa (JP)
Assigned to SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Filed on Dec. 31, 2019, as Appl. No. 16/732,003.
Application 16/732,003 is a continuation of application No. 15/325,768, granted, now 10,554,874, previously published as PCT/JP2015/069827, filed on Jul. 10, 2015.
Claims priority of application No. 2014-148837 (JP), filed on Jul. 22, 2014.
Prior Publication US 2020/0162661 A1, May 21, 2020
Int. Cl. H01L 27/146 (2006.01); G02B 7/38 (2021.01); G02B 7/34 (2021.01); H04N 23/67 (2023.01); H04N 25/704 (2023.01); G02B 13/00 (2006.01); G03B 13/36 (2021.01)
CPC H01L 27/14609 (2013.01) [G02B 7/34 (2013.01); G02B 7/38 (2013.01); G02B 13/0085 (2013.01); H01L 27/14607 (2013.01); H01L 27/14625 (2013.01); H01L 27/14627 (2013.01); H01L 27/14645 (2013.01); H01L 27/14665 (2013.01); H04N 23/672 (2023.01); H04N 23/673 (2023.01); H04N 25/704 (2023.01); G03B 13/36 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A solid-state imaging device comprising:
an organic photoelectric conversion film, wherein the organic photoelectric conversion film comprises two or more laminated photoelectric conversion layers, wherein each photoelectric conversion layer includes a photoelectric converter and a charge detector;
a copper-to-copper (“Cu—Cu”) metal coupling;
a lower-side substrate;
one or more photodiodes formed on the lower-side substrate;
an intermediate layer between the organic photoelectric conversion film and the one or more photodiodes; and
a multi-layer wiring layer bonded to the lower-side substrate via the Cu—Cu metal coupling.