US 11,728,356 B2
Photoelectric conversion element and imaging device
Koji Dairiki, Ayabe (JP); and Shunpei Yamazaki, Setagaya (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken (JP)
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed on May 9, 2016, as Appl. No. 15/149,469.
Claims priority of application No. 2015-099011 (JP), filed on May 14, 2015.
Prior Publication US 2016/0336363 A1, Nov. 17, 2016
Int. Cl. H01L 27/146 (2006.01); H01L 31/0272 (2006.01); H01L 31/0224 (2006.01); H01L 29/04 (2006.01); H01L 29/786 (2006.01)
CPC H01L 27/14607 (2013.01) [H01L 27/14609 (2013.01); H01L 27/14665 (2013.01); H01L 27/14692 (2013.01); H01L 29/04 (2013.01); H01L 29/7869 (2013.01); H01L 31/0224 (2013.01); H01L 31/0272 (2013.01); H01L 27/14627 (2013.01); H01L 27/14636 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A photoelectric conversion element, comprising:
a first electrode;
a second electrode;
a first layer positioned between the first electrode and the second electrode;
a second layer positioned between the first layer and the second electrode; and
a third layer positioned between the first layer and the first electrode,
wherein the first layer comprises selenium,
wherein the second layer comprises In, Ga, Zn, and O,
wherein the second layer comprises an In-Ga—Zn oxide having a c-axis aligned crystal, and
wherein the selenium is a crystalline selenium.