US 11,728,348 B2
Vertically stacked field effect transistors
Anthony K. Stamper, Burlington, VT (US); Steven M. Shank, Jericho, VT (US); Siva P. Adusumilli, Burlington, VT (US); and Michel J. Abou-Khalil, Essex Junction, VT (US)
Assigned to GLOBALFOUNDRIES U.S. Inc., Malta, NY (US)
Filed by GLOBALFOUNDRIES U.S. Inc., Malta, NY (US)
Filed on Oct. 11, 2021, as Appl. No. 17/498,241.
Application 17/498,241 is a division of application No. 16/561,956, filed on Sep. 5, 2019, granted, now 11,183,514.
Prior Publication US 2022/0028992 A1, Jan. 27, 2022
Int. Cl. H01L 23/31 (2006.01); H01L 27/12 (2006.01); H01L 27/02 (2006.01); H01L 29/16 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01); H01L 29/10 (2006.01); H01L 29/40 (2006.01); H01L 21/762 (2006.01); H01L 21/311 (2006.01); H01L 21/02 (2006.01); H01L 21/84 (2006.01); H01L 21/3065 (2006.01); H01L 29/66 (2006.01)
CPC H01L 27/1203 (2013.01) [H01L 21/02532 (2013.01); H01L 21/3065 (2013.01); H01L 21/31111 (2013.01); H01L 21/7624 (2013.01); H01L 21/84 (2013.01); H01L 27/0207 (2013.01); H01L 29/0847 (2013.01); H01L 29/1087 (2013.01); H01L 29/16 (2013.01); H01L 29/401 (2013.01); H01L 29/41758 (2013.01); H01L 29/665 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A structure comprising:
a single crystalline substrate material;
a trench formed in the single crystalline substrate material;
a first gate structure on a bottom of the trench, with source and drain regions formed in the single crystalline substrate material in the bottom of the trench;
an epitaxial material of single crystalline material which is in the trench and isolated from the single crystalline substrate material and the first gate structure; and
a second gate structure on the epitaxial material of single crystalline material, with source and drain regions formed in the epitaxial material of single crystalline material.