CPC H01L 27/1203 (2013.01) [H01L 21/02532 (2013.01); H01L 21/3065 (2013.01); H01L 21/31111 (2013.01); H01L 21/7624 (2013.01); H01L 21/84 (2013.01); H01L 27/0207 (2013.01); H01L 29/0847 (2013.01); H01L 29/1087 (2013.01); H01L 29/16 (2013.01); H01L 29/401 (2013.01); H01L 29/41758 (2013.01); H01L 29/665 (2013.01)] | 19 Claims |
1. A structure comprising:
a single crystalline substrate material;
a trench formed in the single crystalline substrate material;
a first gate structure on a bottom of the trench, with source and drain regions formed in the single crystalline substrate material in the bottom of the trench;
an epitaxial material of single crystalline material which is in the trench and isolated from the single crystalline substrate material and the first gate structure; and
a second gate structure on the epitaxial material of single crystalline material, with source and drain regions formed in the epitaxial material of single crystalline material.
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