US 11,728,345 B2
Multi-gate metal-oxide-semiconductor field effect transistor
Dong-chan Suh, Suwon-si (KR); Gi-gwan Park, Hwaseong-si (KR); Dong-woo Kim, Incheon (KR); and Dong-suk Shin, Yongin-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jun. 11, 2021, as Appl. No. 17/345,090.
Application 17/345,090 is a continuation of application No. 17/014,254, filed on Sep. 8, 2020, granted, now 11,037,926.
Application 17/014,254 is a continuation of application No. 16/453,721, filed on Jun. 26, 2019, granted, now 11,069,685.
Application 16/453,721 is a continuation of application No. 15/611,893, filed on Jun. 2, 2017, granted, now 10,361,202, issued on Jul. 23, 2019.
Claims priority of application No. 10-2016-0077545 (KR), filed on Jun. 21, 2016.
Prior Publication US 2021/0305253 A1, Sep. 30, 2021
Int. Cl. H01L 27/092 (2006.01); H01L 21/8238 (2006.01); H01L 29/165 (2006.01); H01L 29/66 (2006.01); H01L 29/04 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01)
CPC H01L 27/0924 (2013.01) [H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823878 (2013.01); H01L 27/092 (2013.01); H01L 29/045 (2013.01); H01L 29/0665 (2013.01); H01L 29/165 (2013.01); H01L 29/42392 (2013.01); H01L 29/6656 (2013.01); H01L 29/66545 (2013.01); H01L 29/78696 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
a fin protruding from the substrate;
a plurality of nanosheets disposed on the fin;
a gate disposed on the fin, the gate including a main gate portion on the plurality of nanosheets, and a plurality of sub-gate portions between the plurality of nanosheets and the fin;
a source/drain disposed on the fin, an outer edge region of an upper surface of the source/drain being higher in vertical position relative to an inner region thereof; and
a plurality of insulating spacers disposed on sidewalls of the plurality of sub-gate portions,
wherein:
the plurality of sub-gate portions include a first sub-gate portion, and a second sub-gate portion disposed above the first sub-gate portion, and
a volume of the first sub-gate portion is greater than a volume of the second sub-gate portion.