CPC H01L 27/0886 (2013.01) [H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 29/0649 (2013.01); H01L 29/66545 (2013.01); H10B 10/12 (2023.02)] | 20 Claims |
1. A device comprising:
a first Fin Field-Effect Transistor (FinFET) and a second FinFET on a substrate, wherein the first FinFET comprises a first fin and a first gate structure extending over the first fin, wherein the second FinFET comprises a second fin and a second gate structure extending over the second fin, wherein a longitudinal axis of the second gate structure over the second fin is aligned to a longitudinal axis of the first gate structure over the first fin; and
a first isolation region between the first gate structure and the second gate structure, wherein the first isolation region physically contacts a sidewall of the first gate structure and a sidewall of the second gate structure, wherein the first gate structure extends a first distance from the first isolation region to the first fin, wherein the second gate structure extends a second distance from the first isolation region to the second fin, wherein the second distance is different from the first distance.
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