US 11,728,341 B2
Semiconductor device and method
Chung-Chiang Wu, Taichung (TW); Shih-Hang Chiu, Taichung (TW); Chih-Chang Hung, Hsinchu (TW); I-Wei Yang, Yilan County (TW); Shu-Yuan Ku, Zhubei (TW); Cheng-Lung Hung, Hsinchu (TW); Da-Yuan Lee, Jhubei (TW); and Ching-Hwanq Su, Tainan (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Mar. 24, 2022, as Appl. No. 17/656,295.
Application 17/000,632 is a division of application No. 16/010,366, filed on Jun. 15, 2018, granted, now 10,756,087, issued on Aug. 25, 2020.
Application 17/656,295 is a continuation of application No. 17/000,632, filed on Aug. 24, 2020, granted, now 11,289,480.
Prior Publication US 2022/0216201 A1, Jul. 7, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 21/8234 (2006.01); H01L 29/66 (2006.01); H10B 10/00 (2023.01)
CPC H01L 27/0886 (2013.01) [H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 29/0649 (2013.01); H01L 29/66545 (2013.01); H10B 10/12 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
a first Fin Field-Effect Transistor (FinFET) and a second FinFET on a substrate, wherein the first FinFET comprises a first fin and a first gate structure extending over the first fin, wherein the second FinFET comprises a second fin and a second gate structure extending over the second fin, wherein a longitudinal axis of the second gate structure over the second fin is aligned to a longitudinal axis of the first gate structure over the first fin; and
a first isolation region between the first gate structure and the second gate structure, wherein the first isolation region physically contacts a sidewall of the first gate structure and a sidewall of the second gate structure, wherein the first gate structure extends a first distance from the first isolation region to the first fin, wherein the second gate structure extends a second distance from the first isolation region to the second fin, wherein the second distance is different from the first distance.