CPC H01L 27/0629 (2013.01) [H01L 28/20 (2013.01); H01L 28/40 (2013.01)] | 20 Claims |
1. A semiconductor device comprising:
a semiconductor region;
an active region disposed in the semiconductor region;
a termination region disposed on the semiconductor region and adjacent to the active region; and
a resistor disposed in the termination region, the resistor including:
a trench;
a conductive material disposed in the trench;
a first cavity separating the trench from the semiconductor region, a portion of the first cavity being disposed between a bottom of the trench and the semiconductor region; and
a second cavity separating the trench from the semiconductor region.
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