US 11,728,316 B2
Method for fabricating semiconductor device with heat dissipation features
Shing-Yih Shih, New Taipei (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on May 17, 2022, as Appl. No. 17/746,030.
Application 17/746,030 is a division of application No. 17/158,337, filed on Jan. 26, 2021, granted, now 11,574,891.
Prior Publication US 2022/0278078 A1, Sep. 1, 2022
Int. Cl. H01L 25/00 (2006.01); H01L 25/065 (2023.01); H01L 25/18 (2023.01); H01L 23/498 (2006.01); H01L 21/48 (2006.01)
CPC H01L 25/0657 (2013.01) [H01L 21/486 (2013.01); H01L 23/49827 (2013.01); H01L 25/18 (2013.01); H01L 25/50 (2013.01); H01L 2225/06524 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06589 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method for fabricating a semiconductor device, comprising:
forming a carrier substrate;
forming a plurality of substrate vias in the carrier substrate for thermally conducting heat;
forming a carrier bonding layer on the carrier substrate, wherein the carrier substrate, the plurality of substrate vias, and the carrier bonding layer together configure a carrier structure;
providing a first die structure comprising a plurality of through semiconductor vias;
forming an intervening bonding layer on the first die structure;
bonding the first die structure onto the carrier bonding layer of the carrier structure through the intervening bonding layer; and
bonding a second die structure onto the first die structure, wherein the second die structure and the first die structure are electrically coupled by the plurality of through semiconductor vias.