US 11,728,310 B2
Method and structure for die bonding using energy beam
Min-Hsun Hsieh, Hsinchu (TW); Shih-An Liao, Hsinchu (TW); Ying-Yang Su, Hsinchu (TW); Hsin-Mao Liu, Hsinchu (TW); Tzu-Hsiang Wang, Hsinchu (TW); and Chi-Chih Pu, Hsinchu (TW)
Assigned to EPISTAR CORPORATION, Hsinchu (TW)
Filed by EPISTAR CORPORATION, Hsinchu (TW)
Filed on Jun. 13, 2022, as Appl. No. 17/838,307.
Application 17/838,307 is a division of application No. 16/551,764, filed on Aug. 27, 2019, granted, now 11,362,060.
Claims priority of provisional application 62/797,082, filed on Jan. 25, 2019.
Prior Publication US 2022/0310555 A1, Sep. 29, 2022
Int. Cl. H01L 23/00 (2006.01); H01L 25/16 (2023.01); H01L 25/075 (2006.01); H01L 23/498 (2006.01); B23K 26/22 (2006.01); B23K 101/40 (2006.01)
CPC H01L 24/81 (2013.01) [B23K 26/22 (2013.01); H01L 23/49866 (2013.01); H01L 24/83 (2013.01); H01L 25/0753 (2013.01); H01L 25/167 (2013.01); B23K 2101/40 (2018.08); H01L 2224/81005 (2013.01); H01L 2224/81224 (2013.01); H01L 2224/83005 (2013.01); H01L 2224/83224 (2013.01); H01L 2924/12041 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A method of manufacturing a lighting device, comprising:
providing a circuit structure, the circuit structure comprising a glass plate and a first electrical contact arranged on the glass plate;
providing a first semiconductor element, a second semiconductor element, and a third semiconductor element, the first semiconductor element having a first electrode;
applying a first bonding material;
arranging the first semiconductor element, the second semiconductor element, and the third semiconductor element on the circuit structure, the first electrode being aligned with and facing to the first electrical contact; and
providing an energy beam in a dot-scattering heating pattern to heat the first bonding material and join the first electrode and the first electrical contract.