US 11,728,307 B2
Semiconductor interconnect structures with conductive elements, and associated systems and methods
Shams U. Arifeen, Boise, ID (US); Quang Nguyen, Boise, ID (US); Christopher Glancey, Boise, ID (US); Koustav Sinha, Boise, ID (US); and Chan H. Yoo, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Apr. 21, 2021, as Appl. No. 17/236,499.
Prior Publication US 2022/0344295 A1, Oct. 27, 2022
Int. Cl. H01L 23/00 (2006.01)
CPC H01L 24/13 (2013.01) [H01L 24/11 (2013.01); H01L 2224/1147 (2013.01); H01L 2224/13013 (2013.01); H01L 2224/13014 (2013.01); H01L 2224/13078 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2924/3512 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a semiconductor die; and
a pillar structure coupled to the semiconductor die, wherein the pillar structure includes—
a plurality of conductive elements, each electrically coupled to and extending linearly away from the semiconductor die, wherein each conductive element includes a first conductive material having a first elastic modulus, and
a continuous region of a second conductive material at least partially surrounding the plurality of conductive elements, the second conductive material having a second elastic modulus less than the first elastic modulus.