US 11,728,304 B2
Nonvolatile memory device, system including the same and method of fabricating the same
Jae Ho Ahn, Seoul (KR); Ji Won Kim, Seoul (KR); Sung-Min Hwang, Hwaseong-si (KR); Joon-Sung Lim, Seongnam-si (KR); and Suk Kang Sung, Seongnam-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD.
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Apr. 26, 2021, as Appl. No. 17/240,641.
Claims priority of application No. 10-2020-0125854 (KR), filed on Sep. 28, 2020.
Prior Publication US 2022/0102306 A1, Mar. 31, 2022
Int. Cl. H01L 25/065 (2023.01); H01L 23/00 (2006.01); H01L 25/18 (2023.01); H01L 23/535 (2006.01); H01L 21/768 (2006.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01)
CPC H01L 24/08 (2013.01) [H01L 21/76805 (2013.01); H01L 21/76895 (2013.01); H01L 23/535 (2013.01); H01L 25/0657 (2013.01); H01L 25/18 (2013.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02); H01L 2224/08145 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/14511 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A nonvolatile memory device comprising:
a substrate extending in a first direction;
a ground selection line extending in the first direction on the substrate;
a plurality of word lines stacked sequentially on the ground selection line and extending in the first direction;
a landing pad spaced apart from the ground selection line and the plurality of word lines in the first direction;
a rear contact plug connected to a lower face of the landing pad and extending in a second direction intersecting the first direction and perpendicular to an upper surface of the substrate;
a front contact plug connected to an upper face of the landing pad that is opposite the lower face, the front contact plug extending in the second direction;
an input/output pad connected to the rear contact plug; and
an upper bonding pad electrically connected to the front contact plug and connected to at least a part of a plurality of circuit elements of the nonvolatile memory device.