US 11,728,281 B2
Shielded semiconductor packages with open terminals and methods of making via two-step process
ChangOh Kim, Incheon (KR); KyoWang Koo, Incheon (KR); SungWon Cho, Seoul (KR); and BongWoo Choi, Seoul (KR)
Assigned to STATS ChipPAC Pte. Ltd., Singapore (SG)
Filed by STATS ChipPAC Pte. Ltd., Singapore (SG)
Filed on Mar. 18, 2021, as Appl. No. 17/205,779.
Application 17/205,779 is a division of application No. 16/234,233, filed on Dec. 27, 2018, granted, now 10,985,109.
Prior Publication US 2021/0210437 A1, Jul. 8, 2021
Int. Cl. H01L 21/56 (2006.01); H01L 21/48 (2006.01); H01L 23/552 (2006.01); H01L 23/31 (2006.01); H01R 43/20 (2006.01); H01R 43/26 (2006.01); H01R 12/79 (2011.01); H01R 12/52 (2011.01)
CPC H01L 23/552 (2013.01) [H01L 21/4814 (2013.01); H01L 21/4853 (2013.01); H01L 21/563 (2013.01); H01L 23/3121 (2013.01); H01R 12/52 (2013.01); H01R 12/79 (2013.01); H01R 43/205 (2013.01); H01R 43/26 (2013.01); H01L 21/565 (2013.01)] 25 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
a terminal formed over the substrate;
an insulating layer formed over the substrate including an opening in the insulating layer over the terminal;
an encapsulant disposed over a first portion of the insulating layer while a second portion of the insulating layer around the opening of the insulating layer remains exposed from the encapsulant; and
a shielding layer formed over the substrate, insulating layer, and encapsulant with the shielding layer physically contacting the second portion of the insulating layer, wherein an opening in the shielding layer is formed over the terminal.