US 11,728,270 B2
Semiconductor interconnect, electrode for semiconductor device, and method of preparing multielement compound thin film
Youngjae Kang, Suwon-si (KR); SangWoon Lee, Suwon-si (KR); Joungeun Yoo, Seongnam-si (KR); and Duseop Yoon, Seongnam-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR); and AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION, Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR); and AJOU UNIVERSITY INDUSTRY—ACADEMIC COOPERATION FOUNDATION, Suwon-si (KR)
Filed on Jul. 23, 2021, as Appl. No. 17/384,023.
Claims priority of application No. 10-2020-0093380 (KR), filed on Jul. 27, 2020; and application No. 10-2021-0034244 (KR), filed on Mar. 16, 2021.
Prior Publication US 2022/0028792 A1, Jan. 27, 2022
Int. Cl. H01L 23/532 (2006.01); H01L 23/528 (2006.01); H01L 21/285 (2006.01); H01L 29/45 (2006.01)
CPC H01L 23/53204 (2013.01) [H01L 21/2855 (2013.01); H01L 23/5283 (2013.01); H01L 29/45 (2013.01)] 29 Claims
OG exemplary drawing
 
1. A semiconductor interconnect, comprising:
a thin film that includes a multielement compound represented by Formula 1, wherein the thin film has a thickness equal to or less than about 50 nm, a grain size (A) to thickness (B) ratio (A/B) equal to or greater than about 4.7, and a resistivity equal to or less than about 200 μΩ·cm,
Mn+1AXn  Formula 1
wherein in Formula 1,
M includes at least one transition metal selected from elements of periodic table groups 3, 4, 5, and 6,
A includes at least one element selected from elements of periodic table groups 12, 13, 14, 15, and 16,
X is carbon (C), nitrogen (N), or any combination thereof, and
n is 1, 2, or 3.