US 11,728,265 B2
Selective deposition of embedded thin-film resistors for semiconductor packaging
Brandon C. Marin, Chandler, AZ (US); Frank Truong, Gilbert, AZ (US); Shivasubramanian Balasubramanian, Gilbert, AZ (US); Dilan Seneviratne, Chandler, AZ (US); Yonggang Li, Chandler, AZ (US); Sameer Paital, Chandler, AZ (US); Darko Grujicic, Chandler, AZ (US); Rengarajan Shanmugam, Chandler, AZ (US); Melissa Wette, East Palo Alto, CA (US); and Srinivas Pietambaram, Gilbert, AZ (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Sep. 12, 2018, as Appl. No. 16/129,711.
Prior Publication US 2020/0083164 A1, Mar. 12, 2020
Int. Cl. H01L 23/498 (2006.01); H01L 21/48 (2006.01); H01L 23/522 (2006.01); H01L 49/02 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 27/01 (2006.01); H01L 23/64 (2006.01)
CPC H01L 23/5228 (2013.01) [H01L 21/4846 (2013.01); H01L 21/76871 (2013.01); H01L 23/498 (2013.01); H01L 23/5226 (2013.01); H01L 23/647 (2013.01); H01L 24/09 (2013.01); H01L 27/016 (2013.01); H01L 28/24 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A package substrate, comprising:
a dielectric having a first cavity and a second cavity, wherein the first cavity has a first footprint and the second cavity has a second footprint different than the first footprint;
a first resistor embedded in the first cavity of the dielectric and a second resistor embedded in the second cavity of the dielectric, wherein each of the first resistor and the second resistor has a plurality of surfaces and a top surface, and wherein a resistance value of the first resistor is different than a resistance value of the second resistor;
a plurality of first traces on the top surface of the first resistor and a plurality of second traces on the top surface of the second resistor, wherein the plurality of surfaces of the first resistor and the second resistor are a plurality of activated surfaces; and
a plurality of routing traces on the dielectric, wherein the plurality of routing traces are adjacent to the plurality of first traces and the plurality of second traces.