US 11,728,255 B2
Interposer and semiconductor package including same
Ungcheon Kim, Cheonan-si (KR); Sungwoo Park, Seongnam-si (KR); Yukyung Park, Hwaseong-si (KR); and Seungkwan Ryu, Seongnam-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD.
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jan. 21, 2021, as Appl. No. 17/154,067.
Claims priority of application No. 10-2020-0084942 (KR), filed on Jul. 9, 2020.
Prior Publication US 2022/0013445 A1, Jan. 13, 2022
Int. Cl. H01L 23/498 (2006.01); H01L 21/48 (2006.01); H01L 25/18 (2023.01)
CPC H01L 23/49822 (2013.01) [H01L 21/4857 (2013.01); H01L 23/49816 (2013.01); H01L 23/49838 (2013.01); H01L 25/18 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A semiconductor package comprising:
a package substrate;
an interposer mounted on the package substrate; and
a semiconductor chip mounted on the interposer,
wherein the interposer comprises
a base layer including a first surface and a second surface opposite the first surface,
a redistribution structure on the first surface of the base layer, configured to mount the semiconductor chip and including a conductive redistribution pattern,
a first lower protection layer on the second surface of the base layer,
a lower conductive pad on the first lower protection layer,
a through electrode passing through the base layer and the first lower protection layer to electrically connect the conductive redistribution pattern to the lower conductive pad,
a second lower protection layer on the first lower protection layer and contacting at least a portion of the lower conductive pad, and
an indentation formed in an outer edge region of the interposer to provide a continuous sidewall extending through the second lower protection layer and through at least a portion of the first lower protection layer,
wherein the continuous sidewall includes a second curvilinear sidewall extending entirely through the second lower protection layer, and a first curvilinear sidewall extending through the at least a portion of the first lower protection layer, and the continuous sidewall is smooth without discontinuous transitions, and
wherein the continuous sidewall further includes a linear sidewall extending within the indentation from the first curvilinear sidewall to an outer wall of the interposer.