CPC H01L 21/31144 (2013.01) [C23C 16/04 (2013.01); C23C 16/45553 (2013.01); C23C 16/56 (2013.01); H01L 21/0228 (2013.01); H01L 21/02118 (2013.01); H01L 21/02178 (2013.01); H01L 21/02186 (2013.01); H01L 21/0337 (2013.01); H01L 21/31138 (2013.01); H01L 21/32 (2013.01); H01L 21/32139 (2013.01); H01L 21/76834 (2013.01)] | 19 Claims |
1. A process for selectively processing a substrate, the process comprising:
patterning a second layer that is over a first layer of the substrate, such that a first surface of the first layer is exposed;
forming spacers over a second surface of the second layer;
exposing the first surface between at least two of the spacers;
selectively depositing an organic film on the exposed first surface of the first layer relative to the second surface of the second layer, wherein the first surface and the second surface have different compositions, wherein the organic film is deposited between the at least two of the spacers;
subjecting the organic film to an infiltration process to incorporate metal into the organic film and thereby form an infiltrated film, wherein a mask comprises the infiltrated film; and
processing the substrate using the mask, said processing comprising selectively removing material of a first layer that is not under the mask or the spacers relative to material of the first layer that is under the mask and the spacers, wherein the first layer comprises the first surface, wherein the mask comprises the organic film on the first surface.
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