US 11,728,166 B2
Substrate processing method and substrate processing apparatus
Sho Kumakura, Miyagi (JP); Maju Tomura, Miyagi (JP); Yoshihide Kihara, Miyagi (JP); and Hironari Sasagawa, Miyagi (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed on Feb. 27, 2020, as Appl. No. 16/803,377.
Claims priority of application No. 2019-036709 (JP), filed on Feb. 28, 2019; and application No. 2019-203958 (JP), filed on Nov. 11, 2019.
Prior Publication US 2020/0279733 A1, Sep. 3, 2020
Int. Cl. H01L 21/033 (2006.01); H01J 37/32 (2006.01); H01L 21/311 (2006.01); H01L 21/02 (2006.01)
CPC H01L 21/0335 (2013.01) [H01J 37/3244 (2013.01); H01L 21/02315 (2013.01); H01L 21/31144 (2013.01); H01J 2237/3321 (2013.01)] 22 Claims
OG exemplary drawing
 
1. A method of processing a substrate including an etching target film and a mask having an opening formed on the etching target film, comprising:
(a) providing the substrate on a stage in a chamber;
(b) forming a film having a thickness that differs along a film thickness direction of the mask, on a side wall of the opening; and
(c) trimming the film,
wherein when (b) is repeatedly performed n or more times (n is a natural number of 2 or more), a position and a thickness of the film formed in (b) are changed by changing a processing condition in an n-th processing and an (n−1)-th processing, and
a variation in an opening dimension of the opening in the film thickness direction of the mask after (c) is smaller than a variation in an opening dimension of the opening in the film thickness direction of the mask before (c).