CPC H01L 21/02274 (2013.01) [C23C 16/401 (2013.01); C23C 16/45542 (2013.01); C23C 16/45553 (2013.01); H01L 21/0228 (2013.01); H01L 21/02126 (2013.01); H01L 21/02164 (2013.01); H01L 21/02186 (2013.01); H01L 21/02216 (2013.01)] | 20 Claims |
1. A plasma enhanced atomic layer deposition (PEALD) process for selectively depositing an oxide on a dielectric surface of a substrate relative to a TiN surface comprising:
providing a substrate comprising a dielectric surface and a TiN surface;
conducting at least one deposition cycle comprising alternately and sequentially contacting the substrate with a first silicon precursor comprising oxygen and a second reactant comprising reactive species from a plasma generated in a gas comprising hydrogen and not oxygen.
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