US 11,728,163 B2
Method for manufacturing metal oxynitride film
Kazuki Tanemura, Kanagawa (JP); Shota Sambonsuge, Chiba (JP); and Naoki Okuno, Kanagawa (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Appl. No. 17/257,071
Filed by SEMICONDUCTOR ENERGY LABORATORY CO., LTD., Atsugi (JP)
PCT Filed Jun. 24, 2019, PCT No. PCT/IB2019/055287
§ 371(c)(1), (2) Date Dec. 30, 2020,
PCT Pub. No. WO2020/008294, PCT Pub. Date Jan. 9, 2020.
Claims priority of application No. 2018-128964 (JP), filed on Jul. 6, 2018.
Prior Publication US 2021/0125823 A1, Apr. 29, 2021
Int. Cl. H01L 21/00 (2006.01); H01L 21/02 (2006.01); C23C 14/08 (2006.01); C23C 14/34 (2006.01)
CPC H01L 21/02266 (2013.01) [C23C 14/08 (2013.01); C23C 14/34 (2013.01); H01L 21/02172 (2013.01); H01L 21/02293 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A method for manufacturing a metal oxynitride film,
wherein the metal oxynitride film is epitaxially grown in contact with a single crystal substrate by a sputtering method using an oxide target with a gas containing a nitrogen gas introduced,
wherein the oxide target comprises zinc,
wherein the single crystal substrate during deposition of the metal oxynitride film has a temperature that is higher than or equal to 80° C. and lower than or equal to 400° C., and
wherein a flow rate of the nitrogen gas is greater than or equal to 50% and lower than or equal to 100% of a total flow rate of the gas.