US 11,728,145 B2
Stage and substrate processing apparatus
Daisuke Satake, Miyagi (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed on Dec. 21, 2020, as Appl. No. 17/129,868.
Claims priority of application No. 2019-239315 (JP), filed on Dec. 27, 2019.
Prior Publication US 2021/0202219 A1, Jul. 1, 2021
Int. Cl. H01J 37/32 (2006.01); H01L 21/67 (2006.01); H01L 21/687 (2006.01); H01L 21/683 (2006.01)
CPC H01J 37/32724 (2013.01) [H01J 37/3244 (2013.01); H01J 37/32449 (2013.01); H01J 37/32715 (2013.01); H01L 21/67103 (2013.01); H01L 21/6833 (2013.01); H01L 21/68742 (2013.01)] 20 Claims
OG exemplary drawing
 
11. A substrate processing apparatus, comprising:
a chamber;
a base disposed within the chamber and formed of a conductive material;
an electrode disposed above the base; and
an electrostatic chuck disposed above the electrode;
wherein a first pin insertion passage, which penetrates from an upper surface of the electrostatic chuck to a lower surface of the electrostatic chuck and allows a lifter pin to be inserted into and penetrate the first pin insertion passage, is formed in the electrostatic chuck,
wherein a first heat transfer gas passage, which penetrates the upper surface of the electrostatic chuck to the lower surface of the electrostatic chuck and is different from the first pin insertion passage, is formed in the electrostatic chuck,
wherein a second pin insertion passage, which penetrates from an upper surface of the electrode to a lower surface of the electrode and is in communication with the first pin insertion passage, is formed in the electrode,
wherein a second heat transfer gas passage, which penetrates from the upper surface of the electrode to the lower surface of the electrode and is in communication with the first heat transfer gas passage, is formed in the electrode,
wherein a third pin insertion passage, which penetrates from an upper surface of the base to a lower surface of the base and is in communication with the second pin insertion passage, is formed in the base,
wherein the second pin insertion passage is in communication with the second heat transfer gas passage through a common gas passage formed between the lower surface of the electrode and the upper surface of the base,
wherein the first pin insertion passage is vertically in communication with the second pin insertion passage with respect to the upper surface of the electrostatic chuck,
wherein a recess in communication with the second pin insertion passage is formed on the upper surface of the base,
wherein a first member, which includes a plurality of protrusions formed circumferentially, is disposed on the recess, and
wherein the second pin insertion passage is in communication with the common gas passage through grooves formed between the protrusions.