US 11,728,132 B2
Ion implanter and ion implantation method
Mikio Yamaguchi, Ehime (JP); Kazuhisa Ishibashi, Ehime (JP); and Tetsuya Kudo, Ehime (JP)
Assigned to SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD., Tokyo (JP)
Filed by SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD., Tokyo (JP)
Filed on Feb. 8, 2022, as Appl. No. 17/666,952.
Claims priority of application No. 2021-019204 (JP), filed on Feb. 9, 2021.
Prior Publication US 2022/0254602 A1, Aug. 11, 2022
Int. Cl. H01J 37/304 (2006.01); H01J 37/317 (2006.01)
CPC H01J 37/304 (2013.01) [H01J 37/3171 (2013.01)] 19 Claims
OG exemplary drawing
 
1. An ion implanter comprising:
a beam generation device that generates an ion beam with which a workpiece is irradiated;
a control device that sets a plurality of operation parameters for controlling an operation of the beam generation device;
a measurement device that measures at least one of beam characteristics of the ion beam;
a storage device that accumulates data sets in each of which a set of set values of the plurality of operation parameters and a measurement value of the at least one of the beam characteristics of the ion beam are associated with each other; and
an analysis device that generates a function for estimating the at least one of the beam characteristics from a set value of at least one of specific parameters included in the plurality of operation parameters, based on a plurality of the data sets accumulated in the storage device,
wherein when the set value of the at least one of the specific parameters included in the plurality of operation parameters is changed, the control device inputs the changed set value of the at least one of the specific parameters into the function, and calculates an estimated value of the at least one of the beam characteristics.