CPC H01F 10/3254 (2013.01) [G11B 5/3909 (2013.01); G11B 5/3967 (2013.01); H03H 7/258 (2013.01)] | 19 Claims |
1. A magnetoresistive effect element comprising:
a first ferromagnetic layer;
a second ferromagnetic layer; and
a non-magnetic layer located between the first ferromagnetic layer and the second ferromagnetic layer,
wherein a crystal structure of the non-magnetic layer is a spinel structure,
wherein the non-magnetic layer contains Mg, Al, X, and O as elements constituting the spinel structure,
wherein the X is at least one or more elements selected from a group consisting of Ti, Pt, and W,
wherein a crystal structure of the non-magnetic layer is a reverse spinel structure, and
wherein a crystal space group is Imma or P4I22.
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