US 11,728,082 B2
Magnetoresistive effect element
Tsuyoshi Suzuki, Tokyo (JP); Shinto Ichikawa, Tokyo (JP); and Katsuyuki Nakada, Tokyo (JP)
Assigned to TDK CORPORATION, Tokyo (JP)
Filed by TDK CORPORATION, Tokyo (JP)
Filed on Mar. 26, 2021, as Appl. No. 17/214,081.
Claims priority of application No. PCT/JP2020/014736 (WO), filed on Mar. 31, 2020.
Prior Publication US 2021/0304940 A1, Sep. 30, 2021
Int. Cl. H01F 10/32 (2006.01); G11B 5/39 (2006.01); H03H 7/25 (2006.01)
CPC H01F 10/3254 (2013.01) [G11B 5/3909 (2013.01); G11B 5/3967 (2013.01); H03H 7/258 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A magnetoresistive effect element comprising:
a first ferromagnetic layer;
a second ferromagnetic layer; and
a non-magnetic layer located between the first ferromagnetic layer and the second ferromagnetic layer,
wherein a crystal structure of the non-magnetic layer is a spinel structure,
wherein the non-magnetic layer contains Mg, Al, X, and O as elements constituting the spinel structure,
wherein the X is at least one or more elements selected from a group consisting of Ti, Pt, and W,
wherein a crystal structure of the non-magnetic layer is a reverse spinel structure, and
wherein a crystal space group is Imma or P4I22.