US 11,728,005 B2
Bipolar read retry
Yen Chun Lee, Boise, ID (US); Karthik Sarpatwari, Boise, ID (US); and Nevil N. Gajera, Meridian, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Sep. 6, 2022, as Appl. No. 17/903,371.
Application 17/903,371 is a continuation of application No. 17/337,808, filed on Jun. 3, 2021, granted, now 11,475,970.
Prior Publication US 2022/0415429 A1, Dec. 29, 2022
Int. Cl. G11C 29/42 (2006.01); G11C 29/44 (2006.01); G11C 16/34 (2006.01); G11C 29/12 (2006.01)
CPC G11C 29/42 (2013.01) [G11C 16/3404 (2013.01); G11C 29/12005 (2013.01); G11C 29/44 (2013.01); G11C 2029/1202 (2013.01); G11C 2029/1204 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device, comprising:
memory cells;
voltage drivers operable to apply voltages in a first polarity and a second polarity opposite to the first polarity; and
a controller coupled to the voltage drivers and configured to:
read the memory cells to obtain a first result via the voltage drivers applying, to the memory cells, a first voltage having a first magnitude;
check the first result for errors; and
in response to the first result being erroneous:
read the memory cells to obtain a second result via the voltage drivers applying, in the first polarity, a second voltage having a second magnitude that is greater than the first magnitude; and
adjust threshold voltages of the memory cells via the voltage drivers applying, in the second polarity, a third voltage to the memory cells.