US 11,728,000 B1
Systems and methods for detecting counterfeit or defective memory
Biswajit Ray, Madison, AL (US); Umeshwarnath Surendranathan, Huntsville, AL (US); Preeti Kumari, Huntsville, AL (US); and Md Raquibuzzaman, Huntsville, AL (US)
Assigned to Board of Trustees of the University of Alabama, for and on behalf of the University of Alabama in Huntsville, Huntsville, AL (US)
Filed by Biswajit Ray, Madison, AL (US); Umeshwarnath Surendranathan, Huntsville, AL (US); Preeti Kumari, Huntsville, AL (US); and Md Raquibuzzaman, Huntsville, AL (US)
Filed on May 13, 2021, as Appl. No. 17/319,611.
Application 17/319,611 is a continuation in part of application No. 16/219,586, filed on Dec. 13, 2018, granted, now 11,114,179.
Claims priority of provisional application 63/024,268, filed on May 12, 2020.
Claims priority of provisional application 62/598,243, filed on Dec. 13, 2017.
Int. Cl. G11C 29/02 (2006.01); G11C 29/50 (2006.01); G11C 29/38 (2006.01); G11C 29/44 (2006.01)
CPC G11C 29/021 (2013.01) [G11C 29/38 (2013.01); G11C 29/44 (2013.01); G11C 29/50 (2013.01)] 18 Claims
OG exemplary drawing
 
1. An electronics device, comprising:
memory having at least one memory cell; and
circuitry configured to write a value into the memory cell and to perform a plurality of consecutive read operations for reading the value written into the memory cell, thereby providing a plurality of read values, the circuitry further configured to compare the read values and to determine a value indicative of a number of transitions in the read values based on comparisons of the read values, wherein the circuitry is configured to determine whether the memory cell is storing a noisy bit associated with abnormal voltage fluctuations in the memory cell based on the determined value, and wherein the circuitry is configured to determine whether the memory is counterfeit or defective based on whether the memory cell is determined to be storing the noisy bit.