US 11,727,991 B2
Conditionally precharging wordlines based on temperature and duration dependent voltage drops in a storage device
Youhwan Kim, Ansan-si (KR); and Kyungduk Lee, Seoul (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jul. 16, 2021, as Appl. No. 17/378,202.
Claims priority of application No. 10-2020-0177720 (KR), filed on Dec. 17, 2020.
Prior Publication US 2022/0199162 A1, Jun. 23, 2022
Int. Cl. G11C 16/26 (2006.01); G06F 12/02 (2006.01); G11C 16/32 (2006.01); G11C 16/08 (2006.01); G11C 16/04 (2006.01)
CPC G11C 16/08 (2013.01) [G06F 12/0238 (2013.01); G11C 16/0483 (2013.01); G11C 16/26 (2013.01); G11C 16/32 (2013.01); G06F 2212/202 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An operating method of a storage device, the method comprising:
monitoring, by the storage device, a temperature of a nonvolatile memory device including a plurality of memory blocks;
detecting a first condition that indicates a first memory block from among the plurality of memory blocks is being exposed at a temperature of a threshold temperature or higher for a first time period that is equal to or greater than a threshold time period;
detecting a second condition that indicates the first memory block is being exposed at a temperature less than the threshold temperature for the threshold time period;
receiving, by the storage device, a first request from a host; and
in response to the first request;
transmitting, by the storage device, a first command associated with the first condition to the nonvolatile memory device,
in response to the first command, performing, by the storage device, a first operation corresponding to the first re quest on the first memory block with charging a plurality of first word lines of the first memory block with a driving voltage,
transmitting, by the storage device, a second command associated with the second condition to the nonvolatile memory device,
and
in response to the second command performing, by the storage device, the first operation corresponding to the first request on the first memory block without charging the plurality of the first word lines of the first memory block.