US 11,727,989 B2
Programming analog neural memory cells in deep learning artificial neural network
Hieu Van Tran, San Jose, CA (US); Thuan Vu, San Jose, CA (US); Stanley Hong, San Jose, CA (US); Anh Ly, San Jose, CA (US); Vipin Tiwari, Dublin, CA (US); and Nhan Do, Saratoga, CA (US)
Assigned to SILICON STORAGE TECHNOLOGY, INC., San Jose, CA (US)
Filed by Silicon Storage Technology, Inc., San Jose, CA (US)
Filed on May 2, 2022, as Appl. No. 17/734,807.
Application 17/734,807 is a division of application No. 17/191,392, filed on Mar. 3, 2021, granted, now 11,521,683.
Application 17/191,392 is a division of application No. 16/550,253, filed on Aug. 25, 2019, granted, now 10,943,661, issued on Mar. 9, 2021.
Application 16/550,253 is a division of application No. 16/042,972, filed on Jul. 23, 2018, granted, now 10,522,226, issued on Dec. 31, 2019.
Claims priority of provisional application 62/665,359, filed on May 1, 2018.
Prior Publication US 2022/0254414 A1, Aug. 11, 2022
Int. Cl. G11C 16/04 (2006.01); G06N 3/08 (2023.01); H01L 29/788 (2006.01); H10B 41/30 (2023.01); G06N 3/045 (2023.01)
CPC G11C 16/0425 (2013.01) [G06N 3/08 (2013.01); H01L 29/7883 (2013.01); H01L 29/7885 (2013.01); H10B 41/30 (2023.02); G06N 3/045 (2023.01)] 10 Claims
OG exemplary drawing
 
1. A method comprising:
generating a high voltage;
receiving, by a first input of an operational amplifier, the high voltage;
providing the high voltage as an output from the operational amplifier to a high voltage decoder;
programming, by the high voltage decoder, a plurality of non-volatile memory cells in an array using the high voltage when a programming enable signal is asserted; and
providing feedback from the high voltage decoder as a second input to the operational amplifier, wherein the operational amplifier maintains the high voltage output constant while the plurality of non-volatile memory cells are programmed.