US 11,727,965 B2
Nonvolatile memory device, operating method of nonvolatile memory device, and electronic device including nonvolatile memory device
Eunji Lee, Seongnam-si (KR); and Suk-Soo Pyo, Hwaseong-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Oct. 21, 2021, as Appl. No. 17/507,216.
Claims priority of application No. 10-2021-0026219 (KR), filed on Feb. 26, 2021.
Prior Publication US 2022/0277778 A1, Sep. 1, 2022
Int. Cl. G11C 8/08 (2006.01); G11C 7/10 (2006.01)
CPC G11C 7/1039 (2013.01) [G11C 7/109 (2013.01); G11C 7/1048 (2013.01); G11C 7/1063 (2013.01); G11C 7/1066 (2013.01); G11C 7/1093 (2013.01); G11C 8/08 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A nonvolatile memory device comprising:
a memory cell array including a plurality of nonvolatile memory cells; and
a row decoder connected with the memory cell array through wordlines, wherein the row decoder is configured to,
precharge a first wordline corresponding to a first row address from among the wordlines in response to receiving the first row address together with a first command, and
maintain a precharge state of the first wordline in response to receiving a second row address identical to the first row address together with a second command following the first command, and
wherein the row decoder includes,
a first circuit configured to output row address signals, which are input to the first circuit through row address input lines and correspond to the first row address or the second row address, as first internal address signals,
a second circuit configured to delay the row address signals transferred through the row address input lines to output second internal address signals, and
a third circuit configured to output an output signal based on the first internal address signal and the second internal address signals.