US 11,727,552 B2
Method of verifying optical proximity effect correction
Kisung Kim, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Aug. 24, 2020, as Appl. No. 16/947,909.
Claims priority of application No. 10-2020-0013705 (KR), filed on Feb. 5, 2020.
Prior Publication US 2021/0241446 A1, Aug. 5, 2021
Int. Cl. G06K 9/00 (2022.01); G06T 7/00 (2017.01); G06T 7/60 (2017.01); G06T 7/70 (2017.01); G03F 1/36 (2012.01); G03F 7/00 (2006.01); G03F 1/84 (2012.01); G06T 7/66 (2017.01); G06F 30/398 (2020.01)
CPC G06T 7/0004 (2013.01) [G03F 1/36 (2013.01); G03F 1/84 (2013.01); G03F 7/70441 (2013.01); G06F 30/398 (2020.01); G06T 7/60 (2013.01); G06T 7/66 (2017.01); G06T 7/70 (2017.01); G06T 2207/10061 (2013.01); G06T 2207/20021 (2013.01); G06T 2207/30148 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of verifying optical proximity effect correction, comprising:
generating a design pattern layout comprising a target pattern;
generating a correction pattern layout from the design pattern layout by performing optical proximity effect correction;
generating a contour image comprising an image pattern using the correction pattern layout;
detecting a defect pattern from the image pattern of the contour image; and
correcting the correction pattern layout using data of the defect pattern,
wherein the detecting the defect pattern comprises:
acquiring position data of a center of gravity of the target pattern;
acquiring position data of a center of gravity of the image pattern; and
determining whether the image pattern is a defect pattern by comparing a defect pattern detection reference with a distance between the center of gravity of the target pattern and the center of gravity of the image pattern, and
wherein the acquiring the position data of the center of gravity of the image pattern comprises:
splitting the image pattern into a plurality of fine patterns; and
collecting position data of a center of gravity of each of the plurality of fine patterns.