CPC G06F 3/0679 (2013.01) [G06F 3/0604 (2013.01); G06F 3/0652 (2013.01); G06F 3/0655 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 16/14 (2013.01); H10B 43/27 (2023.02)] | 19 Claims |
1. A memory system comprising:
a memory device comprising a plurality of memory blocks each including a plurality of memory cells stacked in a direction perpendicular to a substrate of the memory device; and
a memory controller configured to control a memory operation of the memory device,
wherein the memory controller is configured to designate, among the plurality of memory blocks, a target memory block, which is a first type of memory block having only a first type of memory cells, as a second type of memory block having only a second type of memory cells when the target memory block is determined to include a number of not-open (N/O) strings greater than or equal to a threshold value, and to designate the target memory block as the first type of memory block when the target memory block is determined to include a number of N/O strings less than the threshold value,
wherein the memory controller operates the target memory block with a first data writing control scheme corresponding to the first type of memory block when the target memory block is designated as the first type of memory block and operates the target memory block with a second, different data writing control scheme corresponding to the second type of memory block when the target memory block is designated as the second type of memory block.
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