US 11,726,689 B2
Time-based combining for block families of a memory device
Shane Nowell, Boise, ID (US); Michael Sheperek, Longmont, CO (US); Vamsi Pavan Rayaprolu, San Jose, CA (US); and Kishore Kumar Muchherla, Fremont, CA (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by MICRON TECHNOLOGY, INC., Boise, ID (US)
Filed on Nov. 20, 2020, as Appl. No. 17/100,712.
Prior Publication US 2022/0164106 A1, May 26, 2022
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/064 (2013.01) [G06F 3/0604 (2013.01); G06F 3/0614 (2013.01); G06F 3/0644 (2013.01); G06F 3/0653 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A system comprising:
a memory device; and
a processing device, operatively coupled to the memory device, the processing device is to perform operations comprising:
determining that a first block family of a plurality of block families of the memory device and a second block family of the plurality of block families satisfy a proximity condition, wherein the first block family is associated with a first set of voltage offsets to be applied to a first plurality of blocks of the first block family, and wherein the second block family is associated with a second set of voltage offsets to be applied to a second plurality of blocks of the second block family;
determining whether the first block family and the second block family meet a time-based combining criterion, wherein the time-based combining criterion is based on a multiplier of a time period that has elapsed since a time of starting the first block family, wherein the multiplier is adjusted based on a temperature of the memory device; and
responsive to determining that the first block family and the second block family meet the time-based combining criterion, merging the first block family and the second block family.