US 11,726,233 B2
Method of making a metamaterial device
Urcan Guler, West Lafayette, IN (US); Alexander V. Kildishev, West Lafayette, IN (US); Krishnakali Chaudhury, West Lafayette, IN (US); Shaimaa Ibrahim Azzam, West Lafayette, IN (US); Esteban E. Marinero-Caceres, West Lafayette, IN (US); Harsha Reddy, West Lafayette, IN (US); Alexandra Boltasseva, West Lafayette, IN (US); and Vladimir M. Shalaev, West Lafayette, IN (US)
Assigned to Purdue Research Foundation, West Lafayette, IN (US)
Filed by Purdue Research Foundation, West Lafayette, IN (US)
Filed on Mar. 31, 2020, as Appl. No. 16/835,302.
Application 16/835,302 is a continuation of application No. 15/978,548, filed on May 14, 2018, granted, now 10,670,772.
Claims priority of provisional application 62/505,427, filed on May 12, 2017.
Prior Publication US 2021/0302623 A1, Sep. 30, 2021
Prior Publication US 2022/0397702 A9, Dec. 15, 2022
Int. Cl. B82Y 20/00 (2011.01); G02B 1/00 (2006.01); G01N 21/84 (2006.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01)
CPC G02B 1/002 (2013.01) [G01N 21/8422 (2013.01); B82Y 20/00 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); G01N 2021/8427 (2013.01)] 13 Claims
 
1. A method of making a metamaterial device comprising:
forming a spacer over a base, wherein the base comprises at least one of ZrN, HfN, or TiN;
forming a plasmonic nanostructure over the spacer, wherein the plasmonic nanostructure comprises at least one of ZrN, HfN, or TiN;
wherein a thickness of the spacer is configured to be less than a wavelength of an incident light; and
wherein a thickness of the base is configured to be larger than the equivalent of a skin depth of the incident light in the base.