US 11,726,056 B2
Field-effect transistor sensor
Luisa Torsi, Bari (IT); Gerardo Palazzo, Bari (IT); and Gaetano Scamarcio, Bari (IT)
Assigned to UNIVERSITA' DEGLI STUDI DI BARI ALDO MORO, Bari (IT)
Appl. No. 16/624,034
Filed by UNIVERSITA' DEGLI STUDI DI BARI ALDO MORO, Bari (IT)
PCT Filed May 22, 2018, PCT No. PCT/IB2018/053611
§ 371(c)(1), (2) Date Dec. 18, 2019,
PCT Pub. No. WO2018/234905, PCT Pub. Date Dec. 27, 2018.
Claims priority of application No. 17177349 (EP), filed on Jun. 22, 2017.
Prior Publication US 2021/0148854 A1, May 20, 2021
Int. Cl. H01L 29/41 (2006.01); G01N 27/414 (2006.01)
CPC G01N 27/4145 (2013.01) 11 Claims
OG exemplary drawing
 
1. A field effect transistor sensor including:
a substrate;
a source electrode;
a drain electrode;
a gate electrode functionalized with a layer of biological recognition elements;
a source-drain channel;
a semiconductor layer; and
the layer of biological recognition elements patterned into a plurality of uncoupled domains, such that a surface of the gate electrode is divided into areas of said biological recognition elements;
wherein each domain of said plurality of domains are chemically decoupled from each other domain of said plurality of domains, whereby a chemical change in a first domain of said plurality of domains due to a ligand recognition event is confined within said first domain;
wherein the plurality of domains are arranged according to a matrix; and
wherein each domain of said plurality of domains has a surface extension ranging from 10−7-10−4 cm2 to 10−5-10−1 cm2.