US 11,725,300 B2
In-situ laser annealing of Te growth defects in CdZnTe (ilast-czt)
Sushant Sonde, Westmont, IL (US); Yong Chang, Naperville, IL (US); and Silviu Velicu, Naperville, IL (US)
Assigned to EPIR, INC., Bolingbrook, IL (US)
Filed by Sushant Sonde, Westmont, IL (US); Yong Chang, Naperville, IL (US); and Silviu Velicu, Naperville, IL (US)
Filed on Jun. 13, 2022, as Appl. No. 17/838,956.
Claims priority of provisional application 63/210,054, filed on Jun. 13, 2021.
Prior Publication US 2023/0002928 A1, Jan. 5, 2023
Int. Cl. C30B 19/10 (2006.01); C30B 29/46 (2006.01); C30B 30/00 (2006.01)
CPC C30B 19/10 (2013.01) [C30B 29/46 (2013.01); C30B 30/00 (2013.01)] 11 Claims
OG exemplary drawing
 
1. In a crystal growth furnace having an array of vertically arranged heaters to provide controlled heating zones within a chamber, and a crucible for holding crystal material, wherein the crystal is grown vertically through the heating zones, the improvement comprising:
a laser mounted outside the chamber that radiates a beam of energy to locally melt precipitates and inclusions.