US 11,725,285 B2
Preventing deposition on pedestal in semiconductor substrate processing
Vinayakaraddy Gulabal, Yadgir (IN); Ravi Vellanki, San Jose, CA (US); Gary B. Lind, Penn Valley, CA (US); Michael Rumer, Santa Clara, CA (US); and Manjunath Satyadevan, Bangalore (IN)
Assigned to Lam Research Corporation, Fremont, CA (US)
Appl. No. 17/262,855
Filed by LAM RESEARCH CORPORATION, Fremont, CA (US)
PCT Filed Jul. 25, 2019, PCT No. PCT/US2019/043464
§ 371(c)(1), (2) Date Jan. 25, 2021,
PCT Pub. No. WO2020/028145, PCT Pub. Date Feb. 6, 2020.
Claims priority of provisional application 62/832,952, filed on Apr. 12, 2019.
Claims priority of provisional application 62/712,436, filed on Jul. 31, 2018.
Prior Publication US 2021/0230749 A1, Jul. 29, 2021
Int. Cl. C23C 16/458 (2006.01); C23C 16/02 (2006.01); C23C 16/455 (2006.01)
CPC C23C 16/4583 (2013.01) [C23C 16/0209 (2013.01); C23C 16/0254 (2013.01); C23C 16/45525 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A heat shield structure for a substrate support in a substrate processing system, the heat shield structure comprising:
an outer shield configured to surround a stem of the substrate support, wherein the outer shield is further configured to define (i) an inner volume between the outer shield and an upper portion of the stem and a lower surface of the substrate support and (ii) a vertical channel between the outer shield and a lower portion of the stem of the substrate support, wherein the outer shield includes
a cylindrical portion,
a first lateral portion extending radially outward from the cylindrical portion,
an angled portion extending radially outward and upward from the first lateral portion, and
a second lateral portion extending radially outward from the angled portion,
wherein a length of the first lateral portion is between 50% and 70% of a distance between the stem of the substrate support and the outer perimeter of the substrate support, and
wherein a length of the second lateral portion is between 10% and 25% of the distance between the stem of the substrate support and the outer perimeter of the substrate support.