US 11,725,283 B2
PECVD deposition system for deposition on selective side of the substrate
Fayaz Shaikh, Lake Oswego, OR (US); Nick Linebarger, Beaverton, OR (US); and Curtis Bailey, West Linn, OR (US)
Assigned to Lam Research Corporation, Fremont, CA (US)
Filed by Lam Research Corporation, Fremont, CA (US)
Filed on Dec. 16, 2021, as Appl. No. 17/644,761.
Application 17/644,761 is a continuation of application No. 17/080,749, filed on Oct. 26, 2020.
Application 17/080,749 is a continuation of application No. 15/692,300, filed on Aug. 31, 2017, granted, now 10,851,457, issued on Dec. 1, 2020.
Prior Publication US 2022/0162755 A1, May 26, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/687 (2006.01); C23C 16/455 (2006.01); H01L 21/02 (2006.01); C23C 16/505 (2006.01); C23C 16/52 (2006.01); H01L 21/67 (2006.01); C23C 16/04 (2006.01)
CPC C23C 16/45574 (2013.01) [C23C 16/04 (2013.01); C23C 16/45519 (2013.01); C23C 16/45565 (2013.01); C23C 16/45597 (2013.01); C23C 16/505 (2013.01); C23C 16/52 (2013.01); H01L 21/0217 (2013.01); H01L 21/0262 (2013.01); H01L 21/02164 (2013.01); H01L 21/02211 (2013.01); H01L 21/02216 (2013.01); H01L 21/02274 (2013.01); H01L 21/67017 (2013.01); H01L 21/68735 (2013.01); H01L 21/68771 (2013.01); H01L 21/68785 (2013.01); H01L 21/02532 (2013.01); H01L 21/02595 (2013.01); H01L 21/67161 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A shower-pedestal for supplying processing gases to an underside of a substrate during semiconductor processing operations, the shower-pedestal comprising:
a main body having a top surface;
a plurality of spacers connected with the main body and arranged so as to support a carrier ring sized larger than the substrate, the spacers extending away from the top surface, each spacer having a corresponding spacer top surface with a corresponding recessed region, each recessed region configured to receive a corresponding support extension projecting from the carrier ring that the spacers are configured to receive;
an interior volume located within the main body;
a plurality of orifices arranged on the top surface, connected to the interior volume, and configured to direct a reactant gas toward a substrate located above the top surface; and
a plurality of lift pin holes, each lift pin hole extending through the main body and configured to permit a corresponding lift pin to extend therethrough.