CPC C23C 16/45574 (2013.01) [C23C 16/04 (2013.01); C23C 16/45519 (2013.01); C23C 16/45565 (2013.01); C23C 16/45597 (2013.01); C23C 16/505 (2013.01); C23C 16/52 (2013.01); H01L 21/0217 (2013.01); H01L 21/0262 (2013.01); H01L 21/02164 (2013.01); H01L 21/02211 (2013.01); H01L 21/02216 (2013.01); H01L 21/02274 (2013.01); H01L 21/67017 (2013.01); H01L 21/68735 (2013.01); H01L 21/68771 (2013.01); H01L 21/68785 (2013.01); H01L 21/02532 (2013.01); H01L 21/02595 (2013.01); H01L 21/67161 (2013.01)] | 13 Claims |
1. A shower-pedestal for supplying processing gases to an underside of a substrate during semiconductor processing operations, the shower-pedestal comprising:
a main body having a top surface;
a plurality of spacers connected with the main body and arranged so as to support a carrier ring sized larger than the substrate, the spacers extending away from the top surface, each spacer having a corresponding spacer top surface with a corresponding recessed region, each recessed region configured to receive a corresponding support extension projecting from the carrier ring that the spacers are configured to receive;
an interior volume located within the main body;
a plurality of orifices arranged on the top surface, connected to the interior volume, and configured to direct a reactant gas toward a substrate located above the top surface; and
a plurality of lift pin holes, each lift pin hole extending through the main body and configured to permit a corresponding lift pin to extend therethrough.
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