US 11,725,271 B2
Sputtering apparatus and method for fabricating semiconductor device using the same
Ki Woong Kim, Hwaseong-si (KR); Hyeon Woo Seo, Suwon-si (KR); Hee Ju Shin, Seoul (KR); Se Chung Oh, Yongin-si (KR); and Hyun Cho, Changwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Apr. 15, 2022, as Appl. No. 17/721,428.
Application 17/721,428 is a continuation of application No. 16/793,096, filed on Feb. 18, 2020, granted, now 11,339,467.
Claims priority of application No. 10-2019-0082699 (KR), filed on Jul. 9, 2019.
Prior Publication US 2022/0235450 A1, Jul. 28, 2022
Int. Cl. C23C 14/34 (2006.01); C23C 14/35 (2006.01); H01J 37/32 (2006.01); C23C 14/08 (2006.01); H01J 37/34 (2006.01)
CPC C23C 14/3464 (2013.01) [C23C 14/08 (2013.01); C23C 14/352 (2013.01); H01J 37/32082 (2013.01); H01J 37/32155 (2013.01); H01J 37/32715 (2013.01); H01J 37/3417 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A method for fabricating a semiconductor device, the method comprising:
forming a first magnetic film on a substrate;
loading the substrate having the first magnetic film on a stage, which is in an inside of a chamber;
providing a first power having a first frequency to a first sputter gun;
providing a first sputtering source generated from the first sputter gun to a projection area on a chamber shield, which is in the inside of the chamber and is included from an upper surface of a side wall of the chamber toward the stage, the projection area being spaced apart from the stage in a horizontal direction and not overlapping the stage in a vertical direction;
depositing an insulation film on the first magnetic film by using the first sputtering source;
unloading the substrate from the chamber;
providing a second power having a second frequency to the first sputter gun, the second frequency being higher than the first frequency; and
cleaning a lower surface of a target exposed at a lower portion of the first sputter gun by using the second power,
wherein at least part of the chamber shield overlaps the stage in the horizontal direction.