US 11,725,142 B2
Quantum dots and preparation method thereof, and optical member and electronic device each including quantum dots
Junehyuk Jung, Yongin-si (KR); Seungwon Park, Yongin-si (KR); Junghoon Song, Yongin-si (KR); Baekhee Lee, Yongin-si (KR); Junwoo Lee, Yongin-si (KR); and Jaebok Chang, Yongin-si (KR)
Assigned to Samsung Display Co., Ltd., Yongin-si (KR)
Filed by Samsung Display Co., Ltd., Yongin-si (KR)
Filed on Dec. 9, 2021, as Appl. No. 17/546,882.
Claims priority of application No. 10-2020-0186767 (KR), filed on Dec. 29, 2020.
Prior Publication US 2022/0204843 A1, Jun. 30, 2022
Int. Cl. C09K 11/88 (2006.01); C09K 11/08 (2006.01); C09K 11/75 (2006.01); C09K 11/74 (2006.01); B82Y 40/00 (2011.01); B82Y 20/00 (2011.01)
CPC C09K 11/883 (2013.01) [C09K 11/0883 (2013.01); C09K 11/7492 (2013.01); C09K 11/75 (2013.01); B82Y 20/00 (2013.01); B82Y 40/00 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A quantum dot comprising:
a core comprising a Group III-V semiconductor compound alloyed with gallium (Ga);
a first shell around the core; and
a second shell around the first shell,
wherein the first shell comprises a first compound, which comprises a Group II-VI semiconductor compound, a Group III-V semiconductor compound, or a Group III-VI semiconductor compound,
the second shell comprises a second compound, which comprises a Group II-VI semiconductor compound, a Group III-V semiconductor compound, or a Group III-VI semiconductor compound, and the first compound and the second compound are different from each other,
an atomic percentage of gallium in the core to the Group III element excluding Ga in the core is 25 atomic % to 30 atomic %,
an atomic percentage of the Group V or VI element in the first shell to the Group III element in the core is 5 atomic % to 50 atomic %, and
an atomic percentage of the Group V or VI element in the second shell to the Group III element in the core is 5 atomic % to 50 atomic %.