US 11,725,076 B2
Polymer for formation of resist underlayer film, composition for formation of resist underlayer film comprising same and method for manufacturing semiconductor element by using same
Minho Jung, Daejeon (KR); Namkyu Lee, Daejeon (KR); Jinsu Ham, Daejeon (KR); Kyunphyo Lee, Daejeon (KR); Kwangkuk Lee, Daejeon (KR); Kwangho Lee, Daejeon (KR); Hyeryoung Lee, Daejeon (KR); and Sooyoung Hwang, Daejeon (KR)
Assigned to SK Innovation Co., Ltd., Seoul (KR); and SK Geo Centric Co., Ltd., Seoul (KR)
Appl. No. 16/633,997
Filed by SK Innovation Co., Ltd., Seoul (KR); and SK Global Chemical Co., Ltd., Seoul (KR)
PCT Filed Jul. 2, 2018, PCT No. PCT/KR2018/007467
§ 371(c)(1), (2) Date Jan. 24, 2020,
PCT Pub. No. WO2019/022394, PCT Pub. Date Jan. 31, 2019.
Claims priority of application No. 10-2017-0094063 (KR), filed on Jul. 25, 2017.
Prior Publication US 2020/0199288 A1, Jun. 25, 2020
Int. Cl. G03F 7/004 (2006.01); G03F 7/11 (2006.01); C08G 61/02 (2006.01); H01L 21/027 (2006.01)
CPC C08G 61/02 (2013.01) [G03F 7/0045 (2013.01); G03F 7/0048 (2013.01); G03F 7/11 (2013.01); H01L 21/027 (2013.01); C08G 2261/1422 (2013.01); C08G 2261/1644 (2013.01); C08G 2261/314 (2013.01)] 17 Claims
 
1. A polymer comprising a repeating unit represented by the following Chemical Formula 1:

OG Complex Work Unit Chemistry
wherein
Y is a substituted or unsubstituted C6-C30 aromatic ring;
A is a substituted or unsubstituted C6-C30 aromatic ring;
X1 is a C10-C30 aromatic ring;
a is an integer of 1 to 4; and
the sum of carbon atoms of Y, A and X1 is at least 30.