US 11,724,934 B2
MEMS resonator
Charles I. Grosjean, Los Gatos, CA (US); Nicholas Miller, Sunnyvale, CA (US); Paul M. Hagelin, Saratoga, CA (US); Ginel C. Hill, Sunnyvale, CA (US); and Joseph C. Doll, Mountain View, CA (US)
Assigned to SiTime Corporation, Sunnyvale, CA (US)
Filed by SiTime Corporation, Santa Clara, CA (US)
Filed on Nov. 30, 2022, as Appl. No. 18/72,506.
Application 16/861,778 is a division of application No. 15/676,890, filed on Aug. 14, 2017, granted, now 10,676,349, issued on Jun. 9, 2020.
Application 18/072,506 is a continuation of application No. 16/861,778, filed on Apr. 29, 2020, granted, now 11,584,642.
Claims priority of provisional application 62/396,816, filed on Sep. 19, 2016.
Claims priority of provisional application 62/374,675, filed on Aug. 12, 2016.
Prior Publication US 2023/0183060 A1, Jun. 15, 2023
Int. Cl. B81C 1/00 (2006.01); H10N 30/05 (2023.01); H10N 39/00 (2023.01); H03H 3/007 (2006.01); H03H 9/10 (2006.01)
CPC B81C 1/00698 (2013.01) [H03H 3/0073 (2013.01); H03H 9/1057 (2013.01); H10N 30/05 (2023.02); H10N 39/00 (2023.02); B81C 1/00158 (2013.01); B81C 2201/0171 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit comprising:
a microelectromechanical systems (MEMS) structure having a body that is free to deflect or move in a dimension and one or more electrodes to sense the deflection or movement of the body in the dimension;
the body having an aluminum nitride (AlN) material layer and at least one crystal silicon layer;
the AlN material layer and the at least one crystal silicon layer each characterized as having a second-order contribution to temperature-dependent variation in the deflection or movement of the body; and
the at least one crystal silicon layer configured, in terms of one or more of dopant type, dopant concentration, crystal axis orientation and layer thickness, such that the second-order contribution of the at least one crystal silicon layer has a parabolic characteristic that is inverted relative to the second-order contribution of the AlN material layer, and such that the net second-order contribution to temperature-dependent variation in deflection or movement of the body from both of the AlN material layer and the at least one crystal silicon layer is less than 10 parts-per-million (PPM) throughout an operating temperature range of negative forty-five degrees Celsius through positive eighty-five degrees Celsius.