CPC B81C 1/00698 (2013.01) [H03H 3/0073 (2013.01); H03H 9/1057 (2013.01); H10N 30/05 (2023.02); H10N 39/00 (2023.02); B81C 1/00158 (2013.01); B81C 2201/0171 (2013.01)] | 20 Claims |
1. An integrated circuit comprising:
a microelectromechanical systems (MEMS) structure having a body that is free to deflect or move in a dimension and one or more electrodes to sense the deflection or movement of the body in the dimension;
the body having an aluminum nitride (AlN) material layer and at least one crystal silicon layer;
the AlN material layer and the at least one crystal silicon layer each characterized as having a second-order contribution to temperature-dependent variation in the deflection or movement of the body; and
the at least one crystal silicon layer configured, in terms of one or more of dopant type, dopant concentration, crystal axis orientation and layer thickness, such that the second-order contribution of the at least one crystal silicon layer has a parabolic characteristic that is inverted relative to the second-order contribution of the AlN material layer, and such that the net second-order contribution to temperature-dependent variation in deflection or movement of the body from both of the AlN material layer and the at least one crystal silicon layer is less than 10 parts-per-million (PPM) throughout an operating temperature range of negative forty-five degrees Celsius through positive eighty-five degrees Celsius.
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