US 11,724,932 B2
Integrated micro-electromechanical device of semiconductor material having a diaphragm
Alberto Pagani, Nova Milanese (IT); and Alessandro Motta, Cassano d'Adda (IT)
Assigned to STMicroelectronics S.r.l., Agrate Brianza (IT)
Filed by STMicroelectronics S.r.l., Agrate Brianza (IT)
Filed on Jun. 14, 2019, as Appl. No. 16/442,199.
Application 16/442,199 is a division of application No. 14/856,707, filed on Sep. 17, 2015, granted, now 10,364,143.
Claims priority of application No. TO2014A001068 (IT), filed on Dec. 18, 2014.
Prior Publication US 2019/0292045 A1, Sep. 26, 2019
Int. Cl. B81C 1/00 (2006.01); B81B 7/00 (2006.01); B81B 3/00 (2006.01); G01L 9/00 (2006.01)
CPC B81C 1/00158 (2013.01) [B81B 3/0021 (2013.01); B81B 7/0074 (2013.01); G01L 9/0045 (2013.01); B81B 2201/0264 (2013.01); B81B 2203/0127 (2013.01); B81B 2203/0315 (2013.01); B81C 2201/0116 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for making an integrated micro-electromechanical device, the method comprising:
providing a first body comprising a semiconductor material having a first face and a second face opposite the first face,
forming a diaphragm in the first body, the diaphragm being delimited between a buried cavity and the first face, wherein the diaphragm and interior surfaces of the buried cavity are each made of the semiconductor material;
forming a first magnetic via extending between the second face and the buried cavity of the first body, the first magnetic via being separate from and below the buried cavity;
forming a first magnetic region extending over the first face of the first body;
forming a first coil extending over the second face of the first body and being magnetically coupled to the first magnetic via; and
forming an insulating region including the first coil, the insulating region extending over the second face of the first body.