CPC B81C 1/00158 (2013.01) [B81B 3/0021 (2013.01); B81B 7/0074 (2013.01); G01L 9/0045 (2013.01); B81B 2201/0264 (2013.01); B81B 2203/0127 (2013.01); B81B 2203/0315 (2013.01); B81C 2201/0116 (2013.01)] | 20 Claims |
1. A method for making an integrated micro-electromechanical device, the method comprising:
providing a first body comprising a semiconductor material having a first face and a second face opposite the first face,
forming a diaphragm in the first body, the diaphragm being delimited between a buried cavity and the first face, wherein the diaphragm and interior surfaces of the buried cavity are each made of the semiconductor material;
forming a first magnetic via extending between the second face and the buried cavity of the first body, the first magnetic via being separate from and below the buried cavity;
forming a first magnetic region extending over the first face of the first body;
forming a first coil extending over the second face of the first body and being magnetically coupled to the first magnetic via; and
forming an insulating region including the first coil, the insulating region extending over the second face of the first body.
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