US 11,724,233 B2
High-flux efficiency filter fabrication using a flip bond process with supportive structure
Thomas Young Chang, Menlo Park, CA (US); Kim Yang Lee, Fremont, CA (US); Tan G. Liu, Dublin, CA (US); Yautzong Hsu, Fremont, CA (US); and Shuaigang Xiao, San Ramon, CA (US)
Assigned to Seagate Technology LLC, Fremont, CA (US)
Filed by Seagate Technology LLC, Fremont, CA (US)
Filed on Jul. 9, 2020, as Appl. No. 16/924,839.
Claims priority of provisional application 62/971,329, filed on Feb. 7, 2020.
Claims priority of provisional application 62/971,333, filed on Feb. 7, 2020.
Prior Publication US 2021/0245109 A1, Aug. 12, 2021
Int. Cl. B01D 61/02 (2006.01); B01D 67/00 (2006.01); B01D 61/14 (2006.01); B01D 69/02 (2006.01); B01D 71/02 (2006.01); B01D 69/06 (2006.01); B01D 69/10 (2006.01); B01D 46/10 (2006.01); B01D 69/12 (2006.01)
CPC B01D 67/0062 (2013.01) [B01D 61/145 (2013.01); B01D 69/02 (2013.01); B01D 69/06 (2013.01); B01D 71/02 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a filter, comprising:
forming a first wafer comprising a first stop layer deposited on a substrate, the substrate used to form a base support structure comprising a first collection of first closed shapes;
forming a second wafer comprising a second stop layer deposited on a sacrificial substrate, and a filter layer being deposited on the second stop layer;
depositing a rib layer on one of: the first stop layer of the first wafer; or a third stop layer that is deposited over the filter layer of the second wafer;
etching a rib pattern in the rib layer, the rib pattern comprising a second collection of second closed shapes;
flip bonding the first and second wafers such that the rib pattern is joined between the filter layer and the first stop layer;
forming elongated voids within the filter layer; and
after the flip bonding of the first and second wafers:
etching through the substrate of the first wafer to form the base support structure; and
etching through the first stop layer such that there is a fluid flow path between the base support structure, the rib layer, and the elongated voids of the filter layer.