CPC B01D 67/0062 (2013.01) [B01D 61/145 (2013.01); B01D 69/02 (2013.01); B01D 69/06 (2013.01); B01D 71/02 (2013.01)] | 20 Claims |
1. A method of forming a filter, comprising:
forming a first wafer comprising a first stop layer deposited on a substrate, the substrate used to form a base support structure comprising a first collection of first closed shapes;
forming a second wafer comprising a second stop layer deposited on a sacrificial substrate, and a filter layer being deposited on the second stop layer;
depositing a rib layer on one of: the first stop layer of the first wafer; or a third stop layer that is deposited over the filter layer of the second wafer;
etching a rib pattern in the rib layer, the rib pattern comprising a second collection of second closed shapes;
flip bonding the first and second wafers such that the rib pattern is joined between the filter layer and the first stop layer;
forming elongated voids within the filter layer; and
after the flip bonding of the first and second wafers:
etching through the substrate of the first wafer to form the base support structure; and
etching through the first stop layer such that there is a fluid flow path between the base support structure, the rib layer, and the elongated voids of the filter layer.
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