US 11,723,295 B2
Fabrication method of memory device
Hai Tao Liu, Singapore (SG); Li Li Ding, Singapore (SG); Yao-Hung Liu, Tainan (TW); Guoan Du, Singapore (SG); Qi Lu Li, Singapore (SG); Chunlei Wan, Singapore (SG); Yi Yu Lin, Singapore (SG); Yuchao Chen, Singapore (SG); Huakai Li, Singapore (SG); and Hung-Yueh Chen, Hsinchu (TW)
Assigned to United Microelectronics Corp., Hsinchu (TW)
Filed by United Microelectronics Corp., Hsinchu (TW)
Filed on Dec. 15, 2021, as Appl. No. 17/551,214.
Application 17/551,214 is a division of application No. 16/505,190, filed on Jul. 8, 2019, granted, now 11,239,419.
Claims priority of application No. 201910484945.8 (CN), filed on Jun. 5, 2019.
Prior Publication US 2022/0109104 A1, Apr. 7, 2022
Int. Cl. H01L 45/00 (2006.01); H01L 27/24 (2006.01); H10N 70/00 (2023.01); H10B 63/00 (2023.01); H10N 70/20 (2023.01)
CPC H10N 70/8833 (2023.02) [H10B 63/80 (2023.02); H10N 70/028 (2023.02); H10N 70/24 (2023.02); H10N 70/826 (2023.02); H10N 70/8265 (2023.02); H10N 70/841 (2023.02)] 10 Claims
OG exemplary drawing
 
1. A method for fabricating memory device, comprising:
providing a substrate, having a bottom electrode layer therein;
forming a buffer layer and a mask layer on the buffer layer over the substrate, wherein the buffer layer is in contact with the bottom electrode layer, and a top surface of the bottom electrode layer is covered by the buffer layer;
performing an oxidation process on a peripheral portion of the buffer layer to form the peripheral portion of the buffer layer into a resistive layer, wherein the resistive layer laterally surrounds a remaining portion of the buffer layer after the oxidation process and extends upward vertically from the substrate; and
forming, over the substrate, a noble metal layer and a top electrode layer on the noble metal layer, fully covering the resistive layer and the mask layer.