CPC H10N 70/8413 (2023.02) [H10N 70/011 (2023.02); H10N 70/231 (2023.02); H10N 70/826 (2023.02)] | 16 Claims |
1. A phase change memory device comprising:
a heater element on a bottom electrode surrounded by a dielectric material;
a metal nitride liner over the heater element, wherein the metal nitride liner is oxide-free with a top surface that is level with a top surface of the dielectric material;
a phase change material over the metal nitride liner and the dielectric material; and
a top electrode over the phase change material.
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